High-Performance III-N Devices for RF and Power Applications
| Presenter: |
Patrick Fay |
Notre Dame University |
| Start: |
11:30 (30 minutes) |
Abstract
III-N devices (GaN, AlGaN, and related materials) are promising for both wireless communication applications (such as beyond-5G wireless networks), as well as for high-efficiency power control and conversion applications. For 5G and beyond communications, the system-level demands for wide channel bandwidths and support for complex modulation places extreme demands on device-level performance. To achieve this, devices offering millimeter-wave performance with low power consumption while simultaneously delivering low noise figure, high linearity, and the ability to be integrated into complex systems are essential. The unique properties of the III-N material system (e.g. polarization, LO phonon mediated electron transport) enables new approaches for designing millimeter-wave transistors. For power control and conversion applications, on the other hand, achieving high voltage and current handling capability, as well as low off-state leakage and high efficiency is critical. The large band gaps and excellent transport properties makes the III-N material system a promising candidate. However, challenges remain in field termination, as well as in thermal management.
In this talk, recent advances in these areas that promise to provide improvements in device performance will be presented. Physics-based device simulation approaches that enable exploration of novel device structures will be described, with results compared to experimental demonstrations for devices in both the mm-wave and power control application spaces. Fabrication of device prototypes, and experimental characterization will also be discussed, with an eye toward benchmarking both against competing technologies and the fundamental material limits of the material system. Finally, opportunities for further device performance improvement will be explored.
Biography
III-N devices (GaN, AlGaN, and related materials) are promising for both wireless communication applications (such as beyond-5G wireless networks), as well as for high-efficiency power control and conversion applications. For 5G and beyond communications, the system-level demands for wide channel bandwidths and support for complex modulation places extreme demands on device-level performance. To achieve this, devices offering millimeter-wave performance with low power consumption while simultaneously delivering low noise figure, high linearity, and the ability to be integrated into complex systems are essential. The unique properties of the III-N material system (e.g. polarization, LO phonon mediated electron transport) enables new approaches for designing millimeter-wave transistors. For power control and conversion applications, on the other hand, achieving high voltage and current handling capability, as well as low off-state leakage and high efficiency is critical. The large band gaps and excellent transport properties makes the III-N material system a promising candidate. However, challenges remain in field termination, as well as in thermal management.
In this talk, recent advances in these areas that promise to provide improvements in device performance will be presented. Physics-based device simulation approaches that enable exploration of novel device structures will be described, with results compared to experimental demonstrations for devices in both the mm-wave and power control application spaces. Fabrication of device prototypes, and experimental characterization will also be discussed, with an eye toward benchmarking both against competing technologies and the fundamental material limits of the material system. Finally, opportunities for further device performance improvement will be explored.
