Note: This program is subject to change without notice. Final printed version of program will be available at the conference.
Tutorial (March 21)
| 08:00 | Registration |
| 08:30 | Welcome |
| 08:35 | Jonathan Terry: Fundamentals of Measurement Theory |
Abstract:After a recent illness-related cancellation, Jon stepped in and kindly offered to give this tutorial. We really appreciate him helping out at the last minute and have given him some more time to prepare his talk. Please check back later to watch this tutorial! |
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Biography: |
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| 09:05 | Break |
| 09:10 | Yuzo Fukuzaki: Logic Scaling Trend |
Abstract:Moore's law is one of the most famous and popular theory to understand the scaling trend of semiconductor. In this tutorial, we look back to classical semiconductor theories including Moore's law and learn the changes so far in scaling trend. Recently DTCO (Design Technology Co-Optimization) items are keys to boost (or to compensate of critical dimension scaling delay) in Logic scaling while SRAM does not get benefit from DTCO. Even though SRAM scaling has delayed than Logic, embedded SRAM cache in SoC is very important for high performance computing and therefore it cache memory are growing in spite of paying extra cost for SRAM area. This strong demand of cache memory pushes new technology, such as heterogeneous integration with new levels of interconnect for SRAM die stacking, to have large cache memory than conventional embedded SRAM. We also look into the scaling trends written in IRDS report. We will check IRDS More Moore table how to see the numbers to catch the trend to be expected in near future. |
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Biography: |
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| 09:40 | Break |
| 09:45 | Eric Keiter: Xyce: Open-Source Circuit Simulation |
Abstract:This talk provides an overview of the open-source analog simulation tool, Xyce, which was designed from the ground-up to perform large-scale circuit analysis. Current capabilities of the simulation tool will be discussed, including the analysis methods, device models, and parallel implementation. Other topics will include recent improvements in compatibility with modern process design kits (PDKs). After this broad overview, the second half of the talk will describe a new Xyce feature, a Python-based model interface. This new interface, called Xyce-PyMi, allows the user to develop models in Python and then run them directly in Xyce. This has enabled a lot of our recent research in data-driven model, which are often based on Machine Learning (ML) techniques. Most ML-based research is done in Python, and uses popular python libraries such as TensorFlow and PyTorch. With this new interface, ML-based models can be run directly in Xyce. |
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Biography: |
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| 10:15 | Break |
| 10:20 | Colin McAndrew: Fundamentals of Modeling |
Abstract:Compact models (aka SPICE models) are the “tunnel” through which designers, especially of analog, mixed-signal, and RF circuits, “see” the target manufacturing technology for a product. This tutorial gives a 10,000 m overview of how circuit simulation works, which sets the stage to understand how models should be defined. Best practices for model formulation and implementation are summarized. The 5 basic formulations for MOS transistor models are reviewed. What design textbooks teach you about transistor capacitances is wrong: this tutorial explains why, and presents the most useful way to conceptualize, and understand, capacitances. Characterization of relative (i.e. %) difference is a cornerstone of parameter extraction, and underlies quantification of statistical variability both for process spread and for mismatch (which is modeled via the standard deviation of difference). How you were taught to calculate % difference is wrong: this tutorial presents proper metrics, both bounded (for model parameter extraction) and unbounded (for process spreads and mismatch). |
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Biography: |
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| 10:50 | Break |
| 10:55 | Purushothaman Srinivasan: RF Reliability Characterization in CMOS Bulk and SOI Technologies for 5G Applications |
Abstract:The reliability infrastructure developed for silicon logic is not adequate to address the needs for RF 5G applications. This tutorial will provide a practical overview of the challenges studying the reliability for 5G/mmWave/RF applications implemented with Si based bulk and SOI technologies. We will review reliability within the context of scaling, power and integration showing how these have positioned the Silicon and Silicon Germanium technologies as viable contenders for very high speed, high integration and high reliability applications. We will show a practical approach to the reliability evaluation of Power Amplifiers operating in mmWave and WiFi range along with a discussion of the qualification methodologies required for the release of these technologies to the field. We will cover aspects of the development of reliability models that work under industry standard circuit simulators that provide circuit designers with the necessary tools to extract the maximum performance while achieving optimum reliability. A brief overview of self-heating and its characterization in silicon-based systems will be also be presented. Throughout this tutorial we will show several examples of reliability stress data along with the models to support our methodology and conclusions. |
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Biography: |
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| 11:25 | Break |
| 11:30 | Patrick Fay: High-Performance III-N Devices for RF and Power Applications |
Abstract:III-N devices (GaN, AlGaN, and related materials) are promising for both wireless communication applications (such as beyond-5G wireless networks), as well as for high-efficiency power control and conversion applications. For 5G and beyond communications, the system-level demands for wide channel bandwidths and support for complex modulation places extreme demands on device-level performance. To achieve this, devices offering millimeter-wave performance with low power consumption while simultaneously delivering low noise figure, high linearity, and the ability to be integrated into complex systems are essential. The unique properties of the III-N material system (e.g. polarization, LO phonon mediated electron transport) enables new approaches for designing millimeter-wave transistors. For power control and conversion applications, on the other hand, achieving high voltage and current handling capability, as well as low off-state leakage and high efficiency is critical. The large band gaps and excellent transport properties makes the III-N material system a promising candidate. However, challenges remain in field termination, as well as in thermal management. In this talk, recent advances in these areas that promise to provide improvements in device performance will be presented. Physics-based device simulation approaches that enable exploration of novel device structures will be described, with results compared to experimental demonstrations for devices in both the mm-wave and power control application spaces. Fabrication of device prototypes, and experimental characterization will also be discussed, with an eye toward benchmarking both against competing technologies and the fundamental material limits of the material system. Finally, opportunities for further device performance improvement will be explored. |
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Biography: |
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| 12:00 | Break |
| 12:05 | Reception |
| 13:05 | Closing |
