3D integration technology for CMOS image sensors and future prospects
| Presenter: | Ryoichi Nakamura | Sony Semiconductor Solutions |
| Start: | 09:10 (50 minutes) |
Abstract
3D integration is core technology for advanced devices. CMOS image sensor(CIS) uses 3D integration technology most effectively and has remarkably progressed for these years. In order to realize higher sensitivity and multi-functionality, many types of back-illuminated(BI) stacked CISs are currently in mass production. This talk will focus on recent progress of 3D integration technology used in CIS devices, including(1)Technology of stacked CIS and evaluation (TSV, Cu-Cu bonding, etc.)
(2) Advantages and use case of stacked CIS, and (3)Future prospects of CIS devices.
Biography
3D integration is core technology for advanced devices. CMOS image sensor(CIS) uses 3D integration technology most effectively and has remarkably progressed for these years. In order to realize higher sensitivity and multi-functionality, many types of back-illuminated(BI) stacked CISs are currently in mass production. This talk will focus on recent progress of 3D integration technology used in CIS devices, including(1)Technology of stacked CIS and evaluation (TSV, Cu-Cu bonding, etc.)
(2) Advantages and use case of stacked CIS, and (3)Future prospects of CIS devices.
